|
Optoelectronics Laboratory
Department of Electronic Engineering, City University of Hong Kong |
|
|
|
Facilities
Class 1000 and Class 100 Clean room
| Class 1000/100 clean room |
 |
- Class 100 clean room (16 meter square)
- Class 1000 clean room (86 meter square) infrastructure
|
|
| Electron beam Lithography system (Crestec 9510C) |
 |
- Beam energy : 5 - 50keV (1keV step)
- Minimum spot size : 2nm at 50keV
- Minimum line width : 10nm
- Field size normally : 60 µm to 1200µm
- Stage facilities: laser interferometer stage moveable area: 15cm x 15cm
|
|
|
| Laser direct write system (Microtech LW 405)
|
 |
- Laser wavelength and power: 405 nm, 50 mW
- Write field: 300 x 300 mm.
- 3 drawing modes: beam raster scan, stage raster scan, vector
- Surface patterning speed:
2 mm²/min @ 0.8 µm resolution,
6 mm²/min @ 2 µm resolution,
10 mm²/min @ 4 µm resolution,
40 mm²/min @ 8 µm resolution.
- Mechanical positioning resolution: 0.1 µm
|
|
|
| RF magnetron sputtering system (Norodiko NM2000) |
 |
- 3 rotational targets for multiplayer deposition of metals, alloys and dielectricmaterials
- 500 Watts RF generator with bias voltage mode available
|
|
| Reactive ion etching system (PlasmaTherm 790 system) |
 |
- Six mass flow controlled process gas
- wafer size up to 8 Inch, uniformity +/- 5%
- Minimun etching line width 100nm
|
|
| Inductively coupled plasma etching system (Oxford ICP65) |
 |
- Gases available: CF4, CHF3, SF6, O2, N2, He & Ar
- RF power source: 300W at 13.56MHz and 600W RF Dressler
- Electrode coolant system: -5 ~ 25 deg
- Substrate size: 3?single wafer
- Uniformity: < ±3% (150 mm)
|
|
| Scanning Probe microscope (Thermomicroscope CP research) |
 |
- samples up to 50mm in diameter and up to 25mm thick in ambient environment
- 280x to 1400x magnification optics system
- up to 8 channels of data capture (simultaneous) for CAFM, ICAFM, NAFM, lateral force, STM, FMM and nanolithgraphy etc.
|
|
| High performance mask aligner (Karl Suss MJB-3) |
 |
- 3 axis and rotational adjustments allow for high precision pattern alignment
- g-line optics can access down to less than 1µm features pattering
- constant light intensity mode with 350W power supply
- 2.5 inches and 4 inches mask holder
|
|
| Spinner (Headway R790/Laurell WS400B-6NPP LITE) |
 |
- Uniform coverage even over severe topography
- Highly reproducible thick resist applications
- Reduces resist consumption by up to 50%
|
|
| Step Profiler (Tencor Alpha 500) |
 |
- Measure vertical feature from 0.4?to 0.3mm
- Accommodate samples up to 150mm wide and 15mm thick
|
|
| Step Profiler (Ambios XP-2) |
 |
- Measure vertical feature up to 100um max
- Stylus force range from 0.05-10mg
- Accommodate samples up to 200mm wide and 30mm thick
|
|
| Thermal evaporation system (Edwards Auto 306) |
 |
Thermal evaporator:
- 4 position thermal source
- deposition of low melting point materials
|
|
| Thermal evaporator (Denton DV-502A) |
 |
- 2 position high power thermal source
- Capable for deposition of high melting point materials
|
|
| DC sputter (Denton DV-502A) |
 |
- 4 inches target for more uniform coating
- specially for deposition of Titanium layer
|
|
| Wedge bonder ( K & S 4523) |
 |
- for both gold and aluminum wire bonding
- temperature control up to 250C
|
|
| Sputter coater (Fisons SC502) |
 |
- deposition of Gold/Carbon layer for SEM or EDXA
|
|
|
| © 2006 City University of Hong Kong. All Rights Reserved. | Home · · Top |
