Optoelectronics, Electronics, Power, Nanotechnology
                                       and Biosystems Laboratory
Department of Electrical Engineering, City University of Hong Kong




Class 1000 and Class 100 Clean room


Class 1000/100 clean room
  • Class 100 clean room (16 meter square)
  • Class 1000 clean room (86 meter square) infrastructure


Electron beam Lithography system (Crestec 9510C)
  • Beam energy : 5 - 50keV (1keV step)
  • Source type : FET
  • Minimum spot size : 2nm at 50keV

  • Minimum line width : 10nm
  • Field size normally : 60 µm to 1200µm
  • Stage facilities: laser interferometer stage moveable area: 15cm x 15cm

High performance mask aligner (Karl Suss MJB4)
  • High resolution printing down to 0.8µm
  • 3 axis and rotational adjustments as well as Single field and Split field microscope for fast and accurate high precision pattern alignment

  • Constant light intensity mode with 350W power supply

  • Light intensity uniformity <2% with MO exposure optics
  • Handle mask from 2” x 2” up to 5" x 5" max

  • for pieces 5mm x 5mm up to wafer diameter 100mm or substrate 100mm x 100mm

  • IR alignment module

Spinner (Laurell WS650B-6NPP LITE)
  • Uniform coverage even over severe topography
  • Highly reproducible thick resist applications
  • Reduces resist consumption by up to 50%


RF magnetron sputtering system (Norodiko NM2000)
  • 3 rotational targets for multiplayer deposition of metals, alloys and dielectricmaterials
  • 500 Watts RF generator with bias voltage mode available

RF magnetron sputtering system (Denton deskpro)
  • 2" targets for deposition of metals, alloys and dielectric materials
  • 4" water-cooled rotational substrate holder

Electron beam evaporation system (HHV ATS 500)

  • 4 pocket crucibles Ebeam sources
  • substrate size up to 4 inches



Thermal evaporation system (Edwards Auto 306)

  • 4 position thermal source
  • deposition of low melting point materials



Thermal evaporator (Denton DV-502B)
  • 2 position high power thermal source
  • Capable for deposition of high melting point materials

DC sputter (Denton DV-502A)
  • DC power up to 500W
  • 4 inches target for more uniform coating
  • specially for deposition of Titanium layer


Reactive ion etching system (Vision 320 RIE system)
  • Six mass flow controlled process gas
  • 600 Watts RF power
  • wafer size up to 12 Inch, uniformity +/- 5%
  • Minimun etching line width 100nm


Scanning electron microscope (Hitachi TM4000plus)
  • with magnification up to 100,000X
  • equipped with 3 accelerating voltage mode : 5kV, 10kV and 15kV
  • secondary electron and backscattered electron detectors
  • Substrate size: max 80mm diameter and 50mm thick
  • Stage with X, Y motorized axis

Atomic Force microscope (Hitachi AFM 5100N)
    • scan range: 20μm 20μm 1.5μm
    • 35mm in diameter and 10mm thickness in ambient environment
    • self-detection and optical lever modes.


      Step profiler(Tencor alpha step D600)
      • measure vertical features up to 1200um
      • equipped with motorized stage
      • low stylus force from 0.03 to 15mg




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