Winning 2023 IEEE Transactions on Power Electronics (TPEL) Prize Paper Award (Second Place)

The paper “Adaptive Level-Shift Gate Driver with Indirect Gate Oxide Health Monitoring for Suppressing Crosstalk of SiC MOSFETs” co-authored by Prof Henry Chung (Chair Professor), Mr Tang Ho Tin (PhD student supervised by Prof Henry Chung), and Prof Kevin J. Chen (The Hong Kong University of Science and Technology) have won the 2023 IEEE Transactions on Power Electronics (TPEL) Prize Paper Award – Second Place.

Each year, the IEEE Power Electronics Society recognizes the papers deemed best among those published in the IEEE Transactions on Power Electronics during the preceding calendar year. There were 89 regular paper nominations this round and the winning paper is one of the nine selected papers to receive the Second Place Prize Paper Award.